| 摘要 |
<p>A flash memory device and a manufacturing method of the same are provided to reduce inspection time of a bit line bridge and an inspection cost by inserting a plurality of dummy word lines into a predetermined region thereof. A cell string is formed with a plurality of cells which are arranged in a straight line. A cell block is formed with a plurality of cell strings. A plane(201,202) is formed with a plurality of cell blocks. A plurality of dummy word lines(DWL1,DWL2,DWL3) are inserted into the plane in order to divide the plane into a plurality of regions. The cells of the plurality of regions are connected to bit lines according to voltages applied to the dummy word lines. A drain selection transistor is connected between the cell string and the bit line. A source selection transistor is connected between the cell string and a common source line. The dummy word lines are inserted into a selected part between the cell string and the drain selection transistor.</p> |
