发明名称 VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER
摘要 A vertical external cavity surface emitting laser is provided to improve light extraction efficiency in a quantum well layer by restricting overflow of an electron and a hole and confining the electron and a hole in the quantum well layer through a first barrier layer. In an optimal pumping type vertical external cavity surface emitting laser having a multi-quantum well structured active layer(22) in a resonator, the active layer is composed of plural first barrier layers(22a) periodically arranged in the active layer and made of materials having an energy band gap larger than a band gap of the optimal pumping light; plural multi-quantum well layers(22c) interposed between the first barrier layers, respectively and composed of at least one quantum well layer; and second barrier layers(22b) arranged at both surfaces of each quantum well layer. The first and second barrier layers are doped with n-type dopant.
申请公布号 KR20070109244(A) 申请公布日期 2007.11.15
申请号 KR20060041966 申请日期 2006.05.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, KI SUNG
分类号 H01S3/00 主分类号 H01S3/00
代理机构 代理人
主权项
地址