发明名称 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT, ELEMENT LAMINATE, AND LIGHT EMITTING DEVICE USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element in which homogeneous emission can be obtained over the entire light emitting surface. <P>SOLUTION: A laminate constituted by laminating an n-type layer, an active layer and a p-type layer is provided on a substrate. The laminate comprises n-electrode formation regions parallel to each other in which an n-type layer surface is exposed to form line shaped n-side electrodes. The n-line electrodes are respectively formed on the n-electrode formation regions, and a light-transmitting electrode is formed on almost over the entire surface of the p-type layer, and the n-line electrodes are arranged at regular intervals while being separated from one another, and n-pad electrodes are formed at one end of each of the n-line electrodes. Line shaped current diffusion conductors are formed on the light-transmitting electrode as to be arranged alternately with the n-line electrodes and as to be at equal distances from the adjoining n-line electrode. At one end of the current diffusion conductors, p-pad electrodes are formed. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007300134(A) 申请公布日期 2007.11.15
申请号 JP20070179135 申请日期 2007.07.07
申请人 NICHIA CHEM IND LTD 发明人 KUSUSE TAKESHI;SANGA DAISUKE
分类号 H01L33/06;C09K11/59;C09K11/80;H01L33/32;H01L33/38;H01L33/42;H01L33/50;H01L33/54;H01L33/56;H01L33/62 主分类号 H01L33/06
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