IMAGE SENSOR HAVING DYNAMIC RANGE OF PIXEL ENLARGED BY INTEGRATING TRANSFER GATE WITH POTENTIAL WELL

摘要

PROBLEM TO BE SOLVED: To provide a small solid state CMOS image sensor pixel having a large charge storage capacity, a high dynamic range, and high sensitivity. SOLUTION: The charge transfer transistor has first and second diffusion regions, a gate for controlling charge transfer from the first diffusion region to the second diffusion region by a control signal, and a potential well integrated with the lower portion of the gate wherein the first diffusion region is a pinned photodiode. COPYRIGHT: (C)2008,JPO&INPIT