| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency semiconductor switch capable of suppressing insert loss. SOLUTION: The switch comprises an Si-MOSFET6 comprising a drain D, source S, gate G, and backgate BG; a first inductor 28 of which one end is connected to the drain D while the other end is connected to the backgate BG; and a second inductor 29 of which one end is connected to the source S while the other end is connected to the backgate BG. COPYRIGHT: (C)2008,JPO&INPIT
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