| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device equipped with a fuse formed in the uppermost interlayer insulating film in a multi-layered wiring unit, a protective unit which covers the fuse, and an MIM (metal insulator metal) element formed on the multi-layered wiring unit while the control of thickness of the protective unit is easy. SOLUTION: The semiconductor device 100 is equipped with a semiconductor substrate 10, circuit elements 20, 30 formed on the semiconductor substrate, the multi-layered wiring unit 50 laminated on the semiconductor substrate, a fuse 55 provided on the uppermost interlayer insulating film 45 in the multi-layered wiring unit, a protective unit 60 provided on the fuse, the MIM element 70 formed on the multi-layered wiring unit, and an outermost interlayer insulating film 80 formed on the multi-layered wiring unit. On manufacturing such semiconductor device, the lower electrode 62 of the MIM element is buried into a trench T<SB>3</SB>provided on the uppermost interlayer insulating film in the multi-layered wiring unit, and an electric insulating film 64 as well as an upper electrode 66 are laminated thereon in this sequence. Accordingly, the MIM element is constituted while an outermost interlayer insulating film is formed so as to cover the MIM element. COPYRIGHT: (C)2008,JPO&INPIT
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