| 摘要 |
An overlay vernier of a semiconductor device is provided to prevent a crack at the overlay vernier when performing a cleaning process and a plasma strip process by forming a mother scale for improving the step coverage property of an amorphous carbon layer. An overlay vernier of a semiconductor device comprises a mother scale(21) and a son scale. The mother scale with a circle shape has a predetermined CD(Critical Dimension). The son scale with the circle shape has the CD within the mother scale. The CD of the mother scale is 0.2 mum to 100 mum.
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