| 摘要 |
A multilayer capacitor device, a multilayer varistor device, and a manufacturing method thereof are provided to reduce a variation in a capacitance of the multilayer capacitor device within 1% by improving uniformity in a thickness of a dielectric material. A multilayer capacitor device includes a substrate(110), a laminate, and first and second outer terminals(170,180). The laminate is formed on the substrate and includes at least one upper electrode, at least one lower electrode, and at least one dielectric film. The upper and lower electrodes are formed by using a semiconductor film formation scheme. The dielectric film is arranged between the upper and lower electrodes. The first outer terminal is connected to the upper electrode on the laminate. The second outer terminal is connected to the lower electrode on the laminate. At least one convexo-concave portion(180) is formed on the upper electrode and/or the lower electrode.
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