| 摘要 |
<p>A spectrally efficient photodiode for backside illuminated sensor is provided to form differently light emitting characteristics of a plurality of array regions arranged along a plurality of pixels. A backside illuminated sensor includes a semiconductor substrate(110) having a front surface and a back surface, a plurality of pixels(100) formed on the front surface of the semiconductor substrate, a dielectric layer(124) disposed above the front surface of the semiconductor substrate, and a plurality of array regions arranged according to the plurality of pixels. At least, two of the array regions have a different radiation response characteristic from each other. The first array region has a greater junction depth than the second array region. The first array region has a greater dopant concentration than the second array region.</p> |
