VARIABLE RESISTANCE MEMORY ELEMENT HAVING BUFFER LAYER FORMED ON LOWER ELECTRODE

摘要

PROBLEM TO BE SOLVED: To provide a variable resistance memory element having a buffer layer formed on a lower electrode.

SOLUTION: A non-volatile memory device including a variable resistance material has a lower electrode 20, a buffer layer 22 which is formed of an oxide on the lower electrode, an oxidation layer 24 which is formed on the buffer layer and has variable resistance characteristics, and an upper electrode 26 formed on the oxidation layer.

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