| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of suppressing a deterioration in optical output. <P>SOLUTION: The semiconductor light-emitting element comprises an n-type DBR layer 13 for reflecting a light having a constant wavelength; a light emitting region layer 17 having a light emitting layer 15 for emitting the light having the same wavelength formed on the n-type DBR layer 13; a high-resistance region 20 formed on the side of the layer 17 by a proton injection; a p-type DBR layer 22 contacting on the layer 17 and the region 20, having a proton diffused in the vicinity of the interface with the region 20 and substantially having a function of a current diffusion, and reflecting the light having the identical wavelength; a p-side electrode 25 formed on the p-type DBR layer 22 and over the layer 17 through a p-type contact layer 24; and an n-side electrode 29 formed under the n-type DBR layer 13 opposite to the p-side electrode 25. <P>COPYRIGHT: (C)2008,JPO&INPIT |
