发明名称 SURFACE TREATMENT METHOD OF GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a surface treatment method of a group III nitride crystal which can remove impurities such as abrasive grains remaining in a surface of the group III nitride crystal after polishing by slurry comprising abrasive grains. <P>SOLUTION: The surface treatment method of the group III nitride crystal comprises a process for polishing a surface of the group III nitride crystal 1 by polishing slurry comprising abrasive grains, and thereafter polishes it at least once by a polishing solution 27. In each polishing process by the polishing solution 27, a basic polishing solution or an acid polishing solution is used as the polishing solution 27. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2007299979(A) 申请公布日期 2007.11.15
申请号 JP20060127443 申请日期 2006.05.01
申请人 SUMITOMO ELECTRIC IND LTD 发明人 NISHIURA TAKAYUKI;ISHIBASHI KEIJI
分类号 H01L21/304 主分类号 H01L21/304
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