| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a transistor of trench gate structure and Schottky barrier diode can be mounted mixedly, inexpensively, and to provide its fabrication process. SOLUTION: The semiconductor device comprises a semiconductor layer, a plurality of trenches provided on the major surface side of the semiconductor layer, an insulating film provided on the inner wall face and the upper portion of the trench, a conductive material filling the trench surrounded by the insulating film, a base region provided between the trenches, a source region provided at the surface layer of the base region, a semiconductor mesa portion provided between the trenches in a Schottky barrier diode region adjoining to a transistor region provided with the base region and the source region, a control electrode connected with the conductive material filling the trench in the transistor region, and a main electrode provided in contact with the surface of the source region and the semiconductor mesa portion wherein a portion of the conductive material provided in the Schottky barrier diode region is exposed partially from the insulating film and connected with the main electrode. COPYRIGHT: (C)2008,JPO&INPIT |
