| 摘要 |
A silicon carbide semiconductor device is provided with a semiconductor substrate ( 20 ) of silicon carbide of a first conductivity type, a hetero semiconductor region ( 60 ) forming a hetero-junction with the semiconductor substrate ( 20 ), an insulated gate including a gate electrode ( 40 ) and a gate insulator layer ( 30 ) formed on the semiconductor substrate ( 20 ) and adjoining to the hetero semiconductor region ( 60 ), a source electrode ( 80 ) electrically connected to the hetero semiconductor region ( 60 ) and a drain electrode ( 90 ) electrically connected to the semiconductor substrate ( 20 ).
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