Nanoscale Fet

摘要

A transistor device is formed of a continuous linear nanostructure having a source region, a drain region and a channel region between the source and drain regions. The source ( 20 ) and drain ( 26 ) regions are formed of nanowire ania the channel region ( 24 ) is in the form of a nanotube. An insulated gate ( 32 ) is provided adjacent to the channel region ( 24 ) for controlling conduction i ni the channel region between the source and drain regions.