发明名称 |
Methods of forming a semiconductor device |
摘要 |
A method of forming a semiconductor device may include forming a first conductive metal compound layer on a substrate using a metal organic chemical vapor deposition (MOCVD) process and/or forming a second conductive metal compound layer on the first conductive metal compound layer using a physical vapor deposition (PVD) process. The first and second conductive metal compound layers may be formed while reducing or preventing the exposure of the first conductive metal compound layer to oxygen atoms, thus reducing degradation of the first conductive metal compound layer.
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申请公布号 |
US2007264821(A1) |
申请公布日期 |
2007.11.15 |
申请号 |
US20070785305 |
申请日期 |
2007.04.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JU-YOUN;WON SEOK-JUN;KIM RAK-HWAN;SONG MIN-WOO;KIM WEON-HONG;PARK JUNG-MIN |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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