发明名称 |
VERFAHREN ZUR HERSTELLUNG EINES FLÜSSIGKEITSAUSSTOSSKOPFES, SUBSTRAT FÜR EINEN FLÜSSIGKEITSAUSSTOSSKOPF UND DAZUGEHÖRIGES HERSTELLUNGSVERFAHREN |
摘要 |
An ink supply port (9) is opened in an Si substrate (1) on which an ink discharge energy generating element (2) is formed, by anisotropic etching, from a back surface opposite to a surface on which the ink discharge energy generating element is formed. When the anisotropic etching is effected, OSF (oxidation induced laminate defect) is remained on the back surface of the Si substrate with OSF density equal to or greater than 2 x 10<4> parts/cm<2> and a length of OSF equal to or greater than 2 mu m. |
申请公布号 |
AT375865(T) |
申请公布日期 |
2007.11.15 |
申请号 |
AT20020017857T |
申请日期 |
2002.08.08 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KOYAMA, SHUJI;OZAKI, TERUO;NAGATA, SHINGO |
分类号 |
B41J2/16;B41J2/175 |
主分类号 |
B41J2/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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