| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a jet-type microwave-excited plasma treatment device that causes low-temperature non-thermal equilibrium plasma to be stably jetted from a nozzle by microwave power at atmospheric pressure or a pressure near atmospheric pressure to perform CVD (chemical vapor deposition), etching, or ashing using plasma on a workpiece, or material processing such as fusing, welding or surface reforming on a workpiece. <P>SOLUTION: The jet-type microwave-excited plasma treatment device introduces a microwave to a dielectric substrate 3 from a microwave input part 31 to allow the microwave to propagate between a microstrip line 1 and a tapered conductor 11 provided on one surface of the dielectric substrate 3 and a ground conductor 2 provided on the other surface thereof, emits the microwave from a microwave output part 55, which is a cross section of an end of the dielectric substrate 3 to become the tapered conductor 11 and the ground conductor 2 to a dielectric gas tube 25 having an auxiliary electrode 20, concentrates an electric field of the microwave into the dielectric gas tube 25, and generates plasma jetting from the nozzle provided at one of ends of the dielectric gas tube 25. <P>COPYRIGHT: (C)2008,JPO&INPIT |
