| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating a photodiode for a CMOS image sensor, the method being able to prevent plasma damage causing dark current or heavy metal contamination due to a photoresist removal process. SOLUTION: The method of fabricating the CMOS image sensor includes the steps of providing a substrate in which a predetermined process has completed; forming a patterned block layer on top of a region of the substrate where the photodiode is to be formed; using mask to implant ions into a remaining region except the region where the photodiode is to be formed, leaving the patterned block layer; and removing the mask. COPYRIGHT: (C)2008,JPO&INPIT
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