THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR FABRICATING THE SAME

摘要

A thin film transistor array substrate and a method for fabricating the same are provided to improve display errors such as afterimages by suppressing light leakage. A gate insulating layer(30), an amorphous silicon layer(40), a doped amorphous silicon layer(50), and a data conductive layer(61) are sequentially laminated on an insulating substrate(10) on which a gate electrode(24) is formed. A photoresist pattern(100) including a first region for defining a wiring layer and a second region for defining a channel region is formed on the data conductive layer. The thickness of the second region is smaller than the thickness of the first region. The exposed data conductive layer is partially removed by using the photoresist pattern as an etch mask. The data conductive layer of the channel region is exposed by removing the second region of the photoresist pattern. The exposed data conductive layer of the channel region and the doped amorphous silicon layer are removed by using the photoresist pattern as an etch mask. The partially removed data conductive layer, the doped amorphous silicon layer, and the amorphous silicon layer are removed.