| 摘要 |
<p>A semiconductor device and a manufacturing method of the same are provided to improve data holding characteristics of a non-volatile memory and to prevent size reduction of an EEPROM(Electrically Erasable Programmable Read Only Memory) due to thin thickness of IPD(Inter-Poly-Dielectric). A gate dielectric layer(2) is formed on at least one section of a surface of a semiconductor substrate(1). At least, one first gate electrode(3) is formed on the gate dielectric layer. An inter-electrode dielectric layer(6) is formed by coating a surface of the first gate electrode. At least, a layer thickness of a part covering a part other than a part which does not come into contact with the gate dielectric layer from among a plurality of corner parts of the first gate electrode is smaller than at least a layer thickness of a part covering the corner parts which does not come into contact with the gate dielectric layer. A second gate electrode(9) is formed to cover a surface of the inter-electrode dielectric layer.</p> |
