METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A plasma doping method and a manufacturing method using the same are provided to suppress diffusion of a dopant to the outside and to prevent deterioration of electrical characteristics of a device by obtaining a dopant profile. A plasma doping method includes a process for doping plasma on a substrate(41) or a thin film. The plasma doping method further includes an annealing process for activating a dopant by using a plasma doping method. The plasma doping method further includes a process for changing a bias voltage from a low voltage to a high voltage. The plasma doping method is performed by not only changing the bias voltage from the high voltage to the low voltage but also changing a dose.