| 摘要 |
A dry-etching apparatus is provided to perform an accurate and uniform etching process by increasing uniformity of reaction gas within a chamber. An electrode plate is formed to receive a predetermined voltage. A substrate plate(320) is positioned opposite to the electrode plate in order to form electric field and to support a substrate. Two or more baffles(331-338) are installed on at least one surface of the substrate plate. The baffles are separated from each other. An exhaust hole is formed between the baffles. Two or more baffles are installed apart from each other at least one surface of the substrate plate. A gap between the baffles is 1/6 to 1/4 of a side length of the substrate plate on which the baffles are installed. Each of the baffles is installed at each side of the substrate plate.
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