| 摘要 |
A method for manufacturing a semiconductor device is provided to improve an optical sensitivity of an image sensor by preventing a salicide layer from being formed in a non-salicide forming region. A silicon pattern is formed on a substrate(100). A salicide blocking film(111) is formed on the substrate except for the silicon pattern. A titanium film and a cobalt film are sequentially formed on the silicon pattern and the salicide blocking film, respectively. A permeation blocking layer to prevent a cobalt component of the cobalt film from permeating is formed on an interface between the titanium film and the salicide blocking film. An upper portion of the silicon pattern is annealed to form a mono salicide layer(115) on the silicon pattern. A remaining titanium film and a remaining cobalt film are removed. The mono salicide layer is annealed again to form a di-salicide layer.
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