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发明名称
Memory cells in double-gate CMOS technology fitted with transistors with independent double-gate transistors
摘要
申请公布号
EP1833090(A3)
申请公布日期
2007.11.14
申请号
EP20070103731
申请日期
2007.03.08
申请人
COMMISSARIAT A L'ENERGIE ATOMIQUE
发明人
THOMAS, OLIVIER;BELLEVILLE, MARC
分类号
H01L27/11
主分类号
H01L27/11
代理机构
代理人
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