| 摘要 |
<p>A gas sensor according to the present invention is a resistance-type gas sensor including: an oxide semiconductor layer (11) composed of an oxide containing cerium (11a,11b); and detection electrodes (12) for detecting the resistivity of the oxide semiconductor layer. The oxide semiconductor layer includes an alumina-containing layer (11a) in which alumina is contained, and the detection electrodes (12) are disposed in contact with the alumina-containing layer (11a).</p> |
