发明名称 |
Semiconductor element and fabricating method thereof |
摘要 |
The present semiconductor element comprises a semiconductor substrate, a wiring pad formed thereon, a layer of barrier metal formed thereon, an intermetallic compound Ag3Sn formed thereon, and a protruded electrode consisting of low-melting metal formed thereon. In addition, a fabricating method of a semiconductor element comprises the steps of forming a wiring pad on a semiconductor substrate, forming a layer of barrier metal thereon, forming a metallic layer containing Ag thereon, forming a layer of low-melting metal containing Sn thereon, and melting the layer of low-melting metal containing Sn to form a protruded electrode and simultaneously to form an intermetallic compound Ag3Sn at an interface between the metallic layer containing Ag and the layer of low-melting metal containing Sn. Thus, with Pb-free solder, a semiconductor element of high reliability can be obtained. <IMAGE> |
申请公布号 |
EP1035583(B1) |
申请公布日期 |
2007.11.14 |
申请号 |
EP20000104484 |
申请日期 |
2000.03.09 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;EBARA CORPORATION |
发明人 |
HOMMA, SOICHI;MIYATA, MASAHIRO;EZAWA, HIROKAZU;YOSHIOKA, JUNICHIRO;INOUE, HIROAKI;TOKUOKA, TSUYOSHI |
分类号 |
H01L23/52;H01L23/532;H01L21/3205;H01L21/60;H01L23/485 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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