发明名称 |
Vertical positioning of an optoelectronical component on a carrier relative to an optical conductor integrated on this carrier |
摘要 |
The support includes a lower confinement layer (101) of silica deposited on a silicon base layer (100) and covered by a core (102). The layers are etched to reveal the rough outline of the optical guides and a sacrificial stop layer is deposited on the preceding layers and etched away except on support zones. The upper confinement layer (120) is then deposited and etched to form the guides (124, 126). The stop layer is then removed to reveal the support zones which position the component (130). The zones are, dependent on the manufacturing, at one of the following levels: the top of the core, an intermediate plane between the base and top of the core, the top of the lower confinement layer, or an intermediate plane in the lower confinement layer. |
申请公布号 |
EP0811863(B1) |
申请公布日期 |
2007.11.14 |
申请号 |
EP19970401249 |
申请日期 |
1997.06.04 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
GRAND, GILLES;GIDON, PIERRE |
分类号 |
G02B6/122;G02B6/42;G02B6/12;G02F1/01;H01L33/00 |
主分类号 |
G02B6/122 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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