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发明名称
Nitrogen-doped silicon substantially free of oxidation induced stacking faults
摘要
申请公布号
EP1669478(A3)
申请公布日期
2007.11.14
申请号
EP20050107781
申请日期
2001.08.30
申请人
MEMC ELECTRONIC MATERIALS, INC.
发明人
HAGA, HIROYO;BANAN, MOHSEN;AOSHIMA, TAKAAKI
分类号
C30B15/00;C30B29/06
主分类号
C30B15/00
代理机构
代理人
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