发明名称 Solid-state imaging device and drive control method for the same
摘要 A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.
申请公布号 EP1469669(A3) 申请公布日期 2007.11.14
申请号 EP20040009130 申请日期 2004.04.16
申请人 SONY CORPORATION 发明人 MABUCHI, KEIJI;FUNATSU, EIICHI;KASAI, MASANORI
分类号 H01L27/146;H04N5/335;H04N5/355;H04N5/361;H04N5/369;H04N5/374;H04N5/376 主分类号 H01L27/146
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