发明名称 |
Nonvolatile memory with error correction for page copy operation and method thereof |
摘要 |
The disclosure is a NAND flash memory with the function of error checking and correction during a page copy operation. The NAND flash memory is able to prohibit transcription of erroneous bits to a duplicate page from a source page. Embodiments of the inventive flash memory include a correction circuit for correcting bit errors of source data stored in a page buffer, a circuit configured to provide the source data to the correction circuit and to provide correction data to the page buffer, and a copy circuit configured to copy the source data to the page buffer, and to store the correction data in the other page from the page buffer.
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申请公布号 |
US7296128(B2) |
申请公布日期 |
2007.11.13 |
申请号 |
US20040817061 |
申请日期 |
2004.04.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JIN-YUB |
分类号 |
G06F12/16;G06F12/06;G11C16/02;G11C16/04;G11C16/06;G11C16/10;G11C16/26;G11C29/42 |
主分类号 |
G06F12/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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