| 摘要 |
A method for fabricating a plurality of semiconductor bodies, in particular based on nitride compound semiconductor material. The method includes forming a mask layer ( 3 ) over a substrate ( 1 ) or over an initial layer ( 2 ), which mask layer has a plurality of windows ( 4 ) leading to the substrate ( 1 ) or to the initial layer ( 2 ), etching back the substrate ( 1 ) or the initial layer ( 2 ) in the windows ( 4 ), in such a manner that pits ( 41 ) are formed in the substrate ( 1 ) or in the initial layer ( 2 ) starting from these windows. The semiconductor material ( 5 ) is grown onto the substrate ( 1 ) or onto the initial layer ( 2 ), in such a manner that lateral growth is promoted and the semiconductor material initially grows primarily from the flanks ( 43 ) of the pits ( 41 ) toward the center ( 42 ) of the pits ( 41 ) where they form a coalescence region ( 61 ), so that defects in the substrate ( 1 ) or in the initial layer ( 2 ) which impinge on the flanks ( 43 ) of the pits ( 41 ) bend off toward the center of the pits ( 41 ) in the semiconductor material, and then, starting from the windows ( 4 ), the semiconductor material grows over the mask layer ( 3 ) and grows together over the mask layer ( 3 ) between adjacent windows ( 4 ), where it forms a further coalescence region ( 62 ). A component layer sequence ( 8 ) is grown onto the semiconductor material ( 5 ).
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