Low basal plane dislocation bulk grown SiC wafers

摘要

A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm²) of surface area that has a basal plane dislocation volume density of less than about 500 cm^-2 for a 4 degree off-axis wafer.