| 摘要 |
Disclosed is a semiconductor device having a copper wiring with high electromigration resistance. Specifically disclosed is a semiconductor device having a wiring layer which is formed by such a process wherein a groove or pore is formed in an insulating film formed on a substrate, a barrier layer is then formed on the substrate, a copper seed layer is formed on the barrier layer, a copper plating layer is formed by electrolytic plating using the copper seed layer, and then removing the copper plating layer and the copper seed layer on the surface. The copper seed layer is composed of a plurality of layers including a small grain layer and a large grain layer having different crystal grain sizes, and the small grain layer is in contact with the barrier layer.
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