发明名称 Super lattice tunnel junctions
摘要 Super lattice structures in conjunction with a tunnel junction to provide an improved contact for multiple components. The tunnel junctions can include a first semiconductor material having a resistance parameter for conducting a current and a second semiconductor material having a resistance parameter that is more restrictive to conduction of a current than the resistance parameter of the first semiconductor material. The first semiconductor material can have a critical thickness at which lattice matching of the first semiconductor material causes dislocation. The second semiconductor material can have a critical thickness at which lattice matching of the second semiconductor material causes dislocation that is thicker than the critical thickness of the first semiconductor material. The tunnel junction can be used in a monolithically manufactured photo transmitter and receiver design.
申请公布号 US7294868(B2) 申请公布日期 2007.11.13
申请号 US20050191787 申请日期 2005.07.28
申请人 FINISAR CORPORATION 发明人 DEBRAY JEAN-PHILIPPE MICHEL;GUENTER JAMES K.
分类号 H01L29/00;H01S5/00;H01S5/026;H01S5/183 主分类号 H01L29/00
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