| 摘要 |
A control circuit generates a temperature-dependent gate voltage for turning on a transistor. For NMOS transistors, the gate voltage is increased in response to decreases in temperature to compensate for corresponding increases in the transistor's threshold voltage, and is decreased in response to increases in temperature to compensate for corresponding increases in the transistor's gate oxide's susceptibility to breakdown. For PMOS transistors, the gate voltage is decreased in response to decreases in temperature, and is increased in response to increases in temperature. For some embodiments, the gate voltage is adjusted according to a predetermined relationship between gate voltage and temperature.
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