发明名称 ETCHANT FOR ETCHING AL, MO AND ITO
摘要 An etchant is provided to etch gate electrodes formed of a double layer of aluminum alloy(AlNd) and molybdenum(Mo), source and drain electrodes formed of molybdenum, and pixel electrodes(ITO) during an etching process. An etchant includes 40-70wt% of phosphoric acid, 2-15wt% of nitric acid, 4-35wt% of acetic acid, 0.05-5wt% of a chlorine-based compound, 0.05-5wt% of a chlorine stabilizer, 0.05-5wt% of a lithium-based compound, 0.05-5wt% of a sulfide salt-based compound, and the balance of water. The chlorine-based compound comprises a compound capable of being dissociated into Cl^-. The chlorine stabilizer comprises a Zn, Cd, Pb, Ba-series compound and oleic acid.
申请公布号 KR20070108643(A) 申请公布日期 2007.11.13
申请号 KR20060040941 申请日期 2006.05.08
申请人 LG.PHILIPS LCD CO., LTD.;DONGJIN SEMICHEM CO., LTD. 发明人 SONG, KYE CHAN;CHO, SAM YOUNG;SHIN, HYUN CHEOL;KIM, NAM SEO;LEE, KYOUNG MOOK
分类号 C09K13/06;C09K13/04 主分类号 C09K13/06
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