| 摘要 |
<p>A non-volatile magnetic memory device having one or more memory cells, each of the memory cells includes a magnetic switch including a magnetic component and a write coil located proximate the magnetic component, the write coil coupled to receive a current sufficient to create a remnant magnetic polarity in the magnetic component, and a Hall sensor, positioned proximate the magnetic component, to detect the remnant magnetic polarity indicative of a stored data bit.</p> |
