GUARD RING OF SEMICONDUTOR DEVICE

摘要

A guard ring of a semiconductor device is provided to suppress a circle defect by reducing a stress between an interlayer dielectric and a metal line and between the metal line and a plug. A guard ring of a semiconductor device includes plural metal lines(108), plural interlayer dielectrics, and plural tungsten plugs(107). The metal lines are formed on a semiconductor substrate(101). The interlayer dielectrics are formed between the metal lines. The tungsten plugs are formed on the interlayer dielectrics and couple the metal lines with each other. Plural circular contact holes are formed on the tungsten plug. Tungsten is filled in the circular contact hole. The circular contact holes are arranged in two columns, so that adjacent contact holes are contacted with each other.