| 摘要 |
<p>A mask for manufacturing a CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to suppress a corner rounding phenomenon on a microlens by applying a phase difference of 180 degrees between phase shifts units, which are formed on a mask. A mask for manufacturing a CMOS image sensor includes first and second phase shift units(101,102). The first and second phase shift units have different phases. An edge region of the mask is protruded in a triangular shape, so that the protruded regions are mated with each other. The first and second phase shift units are adjoined with each other on the edge region. Light is interfered by the first and second phase shift units. The first phase shift unit is a 0 degree-phase shift, while the second phase shift unit is a 180 degree-phase shift unit.</p> |
