METHOD OF MANUFACTURING SEMICONDUCTOR AND ETCHING SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor having a sparse pattern region and a dense pattern region, wherein independent control of the dimensions of the spare and dense patterns is enabled with good reproducibility and long-term fluctuations of both the post-exposure dimension of each pattern and the dimension of a gate electrode can be suppressed. SOLUTION: The method of manufacturing a semiconductor device includes: a film-forming step of forming a stacked film on a semiconductor substrate having both a region in which a mask pattern is sparsely formed, and a region in which a mask pattern is formed densely; a lithography step S1 of forming a mask pattern; a cleaning step S11C of removing deposits in the device, and a trimming step S3 of thinning lines of the mask pattern; and dry-etching steps S4, S5 of transferring the mask pattern on the stacked film. A deposition step S2 is installed to follow a seasoning step S11S in either before or after the trimming step S3. COPYRIGHT: (C)2008,JPO&INPIT