IMPLEMENTATION OF AVALANCHE PHOTO DIODES IN (BI) CMOS PROCESSES

摘要

A radiation detector (46) includes a semiconductor layer(s) (12) formed on a substrate (14) and a scintillator (30) formed on the semiconductor layer(s) (12). The semiconductor layer(s) (12) includes an n-doped region (16) disposed adjacent to the substrate (14), and a p-doped region (18) disposed adjacent to the n-doped region (16). A trench (20) is formed within the semiconductor layer(s) (12) and around the p-doped region (18) and is filled with a material (22) that reduces pn junction curvature at the edges of the pn junction, which reduces breakdown at the edges. The scintillator (30) is disposed over and optically coupled to the p-doped regions (18). The radiation detector (46) further includes at least one conductive electrode (24) that electrically contacts the n-doped region.