| 摘要 |
A method of forming a low-resistance metal line in a semiconductor device is provided to maximize an operation speed of the device by forming the metal line of only pure aluminum. An aluminum metal layer(20) is formed on an interlayer dielectric(16) of a wafer, and then an anti-reflective coating layer is deposited on the aluminum metal layer. A photoresist is applied on the anti-reflective coating layer, and then is patterned. A portion is etched by using the patterned photoresist, and then a first interlayer dielectric(40) is formed on an aluminum metal line. The first interlayer dielectric is polished to remove the anti-reflective coating layer, and then a second interlayer dielectric(50) is deposited.
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