| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate capable of maintaining the in-plane uniformity of epitaxial characteristics and capable of ensuring the high yield and high reliability of a device even when a nitride compound semiconductor having ternary or more mixed-crystal compositions is used and a manufacturing method for the nitride semiconductor substrate and an epitaxial substrate for the nitride semiconductor light-emitting device using the nitride semiconductor substrate. <P>SOLUTION: A nitride semiconductor crystal having ternary or more mixed-crystal compositions is epitaxial-grown to thickness of 2 mm or less on a different kind of a substrate having a diameter of 25 mm or more, and the different kind of the substrate is removed, thus obtaining the nitride semiconductor substrate having a thermal resistance value from 0.02 Kcm<SP>2</SP>/W to 0.5 Kcm<SP>2</SP>/W in the thickness direction. A light-emitting layer composed of a nitride semiconductor is epitaxial-grown on the nitride semiconductor substrate, and used as the epitaxial substrate for the nitride semiconductor light-emitting device. <P>COPYRIGHT: (C)2008,JPO&INPIT |
