| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for measuring channel boosting voltage for evaluating program disturbance characteristic of a NAND flash memory element. <P>SOLUTION: The method for specifying the channel boosting voltage includes a step (S201 to S209) of measuring a threshold voltage for path disturbance, a step (S211 to S219) of measuring threshold voltage for program disturbance, and a step (S221 to S223) of measuring channel boosting voltage. Specifically, the method includes a step of measuring the first threshold voltage of a cell which selects an erasing state, a step of measuring the second threshold voltage of a cell which does not select the erasing state, a step of detecting the second threshold voltage of path biasing applied when program operation is executed and detecting the level of the first path biasing applied when the first threshold voltage is measured, and a step of measuring the channel boosting voltage by using the detected level of the first path biasing. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
