| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide the forming method of semiconductor element, which is capable of preventing the change of threshold voltage of a gate due to TED by effecting the forming process of the semiconductor element while utilizing the optimal temperature and an oxidized film substance which are capable of preventing the diffusion of channel ion. <P>SOLUTION: In the present invention related to the forming method of semiconductor element and solving a problem that channel ion is diffused by a successive process after forming a channel ion implantation region and a change is generated in the threshold voltage of a gate, the heat treatment is applied on a semiconductor substrate so that the channel ion can be fixed at the temperature of 770-830°C or the successive process is adjusted by the forming method of an HTO (high temperature oxide) film whereby the change of threshold voltage of the gate can be prevented. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
