| 摘要 |
PROBLEM TO BE SOLVED: To further shorten a termination structure region and a transition region in a semiconductor device, having the termination structure region and the transition region, that is, to place a gate electrode only in an intrinsically necessary region, without elongating a total gate length more than needed. SOLUTION: A trench embedded region 5, having an electrode 20 embedded in a trench slot 19, is provided in the transition region 2 between an active region 1 and the termination structure region 3. A first p-type bypass region 23 is provided along a sidewall and the bottom of the trench slot 19. A second bypass region 6, connected to both the first bypass region 23 and a source electrode 17, is provided on the side of the termination structure region 3 of the slot 19. COPYRIGHT: (C)2008,JPO&INPIT
|
