NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which performs highly efficient writing at low voltage, and is superior in charge holding property, and to provide a method of manufacturing the same. SOLUTION: The nonvolatile semiconductor memory device includes: a semiconductor layer formed over a substrate; a charge storage layer formed over the semiconductor layer with a first insulating layer interposed therebetween; and a gate electrode formed over the charge storage layer with a second insulating layer interposed therebetween. The semiconductor layer includes; a channel formation region provided in an region overlapping with the gate electrode; a first impurity region for forming a source region or drain region which is provided adjacent to the channel formation region; and a second impurity region which is provided adjacent to the channel region and the first impurity region. The first impurity region and the second impurity region are provided so that the conductivities of the two are different from each other. COPYRIGHT: (C)2008,JPO&INPIT