发明名称 REFERENCE VOLTAGE GENERATING CIRCUIT AND POWER SUPPLY DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To reduce a deterioration with age of a reference voltage Vref of a reference voltage generating circuit. SOLUTION: N-channel type MOSFETs Q1, Q2 have the same structure, and each of them has a floating gate and a control gate, and each initial threshold voltage is at an enhancement side. In both of the MOSFETs Q1, Q2, holes are injected in the floating gate. The MOSFET Q1 is made into a depression type. The MOSFET Q2 is made into an enhancement type since less amount of holes than those of the MOSFET Q1 are injected in the MOSFET Q2. A fixed current nature of the MOSFET Q1 is utilized, and the MOSFET Q2 is operated by the fixed current, and a voltage generated in the MOSFET Q2 is taken out as the reference voltage. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007294846(A) 申请公布日期 2007.11.08
申请号 JP20060301070 申请日期 2006.11.07
申请人 RICOH CO LTD 发明人 YOSHIDA MASAAKI;NAKANISHI HIROAKI
分类号 H01L21/822;G05F3/24;H01L27/04;H03F3/345 主分类号 H01L21/822
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