| 摘要 |
PROBLEM TO BE SOLVED: To easily manufacture a semiconductor device which has a little leakage current and a stable breakdown voltage. SOLUTION: A third semiconductor region (23) of a semiconductor substrate (27) has an outer edge region (23a) which encircles an outer side (22b) of a second semiconductor region (22) and an outer side (21a) of a first semiconductor region (21). An inner PN junction (22a) and an outer PN junction (40) are formed between the outer edge region (23a) of the third semiconductor region (23) and an outside surface (22b) of the second semiconductor region (22) and an outer side (21a) of the first semiconductor region (21). An annular region (21c) of the first semiconductor region (21) is formed between a fourth semiconductor region (24) and an outer edge region (23a) of the third semiconductor region (23). When a reverse direction voltage is applied to the inner PN junction (22a) and the outer PN junction (40), a depletion layer spreads inside the annular region (21c), and a reverse breakdown voltage is improved. COPYRIGHT: (C)2008,JPO&INPIT
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